Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method

Chalcogen passivation of GaAs(1 0 0) surfaces: theoretical study

In this work, structural and electronic properties of Seand S-passivated GaAs(1 0 0) surface reconstructions are investigated by density functional theory (DFT) based methods. We have performed total energy minimization of several model geometries of the reconstructed surfaces at different stoichiometry. The common feature is the appearance of a chalcogen layer on top of the Ga terminated surfa...

0 0 2 1 − 2 − 1 1 0 1 1 − 1 − 1 0 0 0 1 − 1

This article is to contribute to the classification of finite-dimensional complex pointed Hopf algebras with Weyl groups of E6, E7, F4, G2. Many papers are about the classification of finite dimensional pointed Hopf algebras, for example, [AS98, AS02, AS00, AS05, He06, AHS08, AG03, AFZ, AZ07, Gr00, Fa07, AF06, AF07, ZZC, ZC]. In these research ones need the centralizers and character tables of ...

GaN / GaAs ( 1 0 0 ) superlattices grown by metalorganic vapor phase epitaxy using dimethylhydrazine precursor

Superlattices of cubic gallium nitride (GaN) and gallium arsenide (GaAs) were grown on GaAs(1 0 0) substrates using metalorganic vapor phase epitaxy (MOVPE) with dimethylhydrazine (DMHy) as nitrogen source. Structures grown at low temperatures with varying layer thicknesses were characterized using high resolution X-ray diffraction and atomic force microscopy. Several growth modes of GaAs on Ga...

0 0 1 1 1 1

Magnetic and structural properties of epitaxial Fe thin films on GaAs(0 0 1) and interfaces

Fe(0 0 1) thin films (70 ( A) with Fe(7.2 ( A) tracer layers at the interface were epitaxially grown on GaAs(4 6) surfaces. Magneto-optic Kerr effect and Ferromagnetic resonance measurements indicate a dominant 2-fold in-plane magnetic anisotropy (easy axis along [1 1 0]) superimposed to a 4-fold anisotropy, and small coercivity (B10Oe). M . ossbauer (CEMS) measurements indicate no magnetic ‘‘d...